PART |
Description |
Maker |
GS72116TP-10 GS72116TP-15 GS72116TP GS72116J-15 GS |
15ns 128K x 16 2Mb asynchronous SRAM 8ns 128K x 16 2Mb asynchronous SRAM 10ns 128K x 16 2Mb asynchronous SRAM 12ns 128K x 16 2Mb asynchronous SRAM
|
GSI[GSI Technology]
|
R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit) Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
AS7C256A AS7C256A-10JC AS7C256A-15JCN AS7C256A-15J |
IC,AS7C256A-10TCN,TSOP-28 ASY SRAM,10NS,32K X 8,5V 5V 32K X 8 CMOS SRAM (Common I/O) 32K X 8 STANDARD SRAM, 20 ns, PDSO28 SRAM - 5V Fast Asynchronous
|
ALLIANCE MEMORY INC Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
GS78132B-12I GS78132B GS78132B-10 GS78132B-10I GS7 |
8Mb56K x 32Bit)Asynchronous SRAM(8M位(256K x 32位)异步静态RAM) 8MB的(256 × 32位)异步SRAM00万位56K × 32位)异步静态RAM)的 256K x 32 8Mb Asynchronous SRAM
|
GSI Technology, Inc.
|
GS74108AX-7 GS74108AX-7I GS74108AJ-7I GS74108ATP-1 |
7ns 512K x 8 4Mb asynchronous SRAM 10ns 512K x 8 4Mb asynchronous SRAM
|
GSI Technology
|
HM62W8511HCJPI-12 |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|
N01L63W3AB25I N01L63W3AB25IT N01L63W3A |
1 Mb Ultra-Low Power Asynchronous CMOS SRAM 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K ? 16 bit
|
ON Semiconductor
|
GS73024AB-12 GS73024AB-10 |
Asynchronous SRAM 128K X 24 STANDARD SRAM, 12 ns, PBGA119 Asynchronous SRAM 128K X 24 STANDARD SRAM, 10 ns, PBGA119
|
GSI Technology, Inc.
|
M68AW128ML55ND6F M68AW128ML70ZB6T M68AW128M M68AW1 |
128K X 16 STANDARD SRAM, 70 ns, PDSO44 2兆位28K的16.0V异步SRAM BACKSHELL 2 Mbit (128K x16) 3.0V Asynchronous SRAM
|
意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
IC61LV6416 IC61LV6416-8TI IC61LV6416-10B IC61LV641 |
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM RES,78.7,1/8W,1%,FXD,SMT,THKF,1206 64K x 16 Hight Speed SRAM with 3.3V 64K的16 Hight高速SRAM.3V
|
ICSI[Integrated Circuit Solution Inc] Ecliptek, Corp.
|
IDT70T633S12BCI IDT70T633S15BF IDT70T633S15BFI IDT |
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208 122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA256 122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA256 HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 高.5V12/256K.3V 5011 2.5V的接口18 ASYNCHRONO美国双端口静态RAM JFET-Input Operational Amplifier 8-SOIC 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144 HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 8 ns, PBGA208 JFET-Input Operational Amplifier 14-SOIC 0 to 70 WRISTBAND, ELASTIC, ADJUSTABLE 4MM RoHS Compliant: NA High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 15ns
|
Integrated Device Technology, Inc. IDT
|